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Review of nano scale MOSFET transistors in high frequency applications


Foad Sharafi


Vol. 17  No. 7  pp. 215-219


This paper reviews the structure and use of nano MOSFET transistors, to achieve significant efficacy in applications of high frequency studies. In this study, we use the transistor model named BSIM4 and comparing the two types of transistors with short channel dimensions of 150 nm and 65nm channel MOSFET technology for prove their performance in radiofrequency applications based on analyzes results obtained from the simulations and comparing with other transistors.


MOSFET, the cut off frequency, the maximum oscillation frequency, noise figure, gain substantial, power added effective, third order intercept.