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Title |
NANOMOSFETs scaling challenges and novel approaches to solve them |
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Author |
Foad Sharafi |
| Citation |
Vol. 17 No. 7 pp. 294-300 |
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Abstract |
This paper describes a comprehensive, simulation based Scaling challenges of MOSFETs including Power and performance management, Polysilicon depletion effect, Quantum effects, Gate tunneling, Threshold voltage roll-off and DIBL and Hot-carrier degradation. After that, then we propose some Technology boosters to decrease a device design, performance characterization, and the impact of statistical variability such as a Stress engineering, Performance enhancements due to strain, High permittivity gate dielectrics, High-k/metal gate and Metal gate on nanometer bulk MOSFETs. For the simulations and show the results, we used the Tcad simulation software. |
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Keywords |
MOSFET, DIBL, SCE, Quantum effects, Stress engineering. |
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