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Title |
Numerical Analysis of Triple ? Barrier GaAs/ AlxGa1-xAs Resonant Tunneling Structure Using PMM Approach |
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Author |
Abbas Zarifkar, Abolfazl Mohammadi Bagherabadi |
| Citation |
Vol. 8 No. 6 pp. 266-270 |
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Abstract |
A theoretical study of triple barrier resonant tunneling diode with multilayer GaAs/AlxGa1-xAs heterostructure is presented based on an exact solution of the Schrodinger equation under the application of a constant electric field and a uniform magnetic field. Using propagation matrix method (PMM), the transmissivity of the structure is calculated as a function of the incident electron energy for different values of applied voltage. The results show good agreement with other existing models. |
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Keywords |
Tunneling, Schrodinger Equation, PMM, RTD, Simulation, Heterostructure, GaAs/AlxGa1-xAs |
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