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Title |
Conception of Low Phase Noise RF-VCO Using MOS Varactor |
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Author |
Nabil Boughanmi, Abdennaceur Kachouri, Dalenda Ben Issa, Mounir Samet |
| Citation |
Vol. 7 No. 9 pp. 166-176 |
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Abstract |
In this paper we propose new oscillator architecture (VCO2) and we compare it with a simple oscillator (VCO1). We describe the design and implementation of the differential LC-VCO for wireless applications. In this work we develop an analytical framework for determining the best VCO for a high-frequency synthesizer design based on the constraints of the application. We show methods for reducing the phase noise in LC-VCO. We describe the optimization of phase noise performance. We examine the effect of the choice of MOS varactor on the performance of a CMOS negative resistance oscillator. The three most common MOS varactor structures (inversion, accumulation, and gated varactor) are well studied. The design of both VCOs was implemented in a standard 0.35μm CMOS process. The VCO 2 is utilized in this study because of its low phase noise. It exhibits a 1.9 GHz frequency at 2 V supply voltage. Phase-noise measurements show a phase-noise of about -90 dBc/Hz at 1MHz from the carrier. |
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Keywords |
VCO, RF, phase noise, varactor and inductance |
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